Influence of the sputtering system's vacuum level on the properties of indium tin oxide films
Identifieur interne : 008983 ( Main/Repository ); précédent : 008982; suivant : 008984Influence of the sputtering system's vacuum level on the properties of indium tin oxide films
Auteurs : RBID : Pascal:06-0216173Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Effet pression, Pulvérisation haute fréquence, Magnétron, Pression partielle, Texture, Facteur transmission, Facteur réflexion, Morphologie, Conductivité électrique, Taux croissance, Cristallisation, Indium oxyde, Etain oxyde, Matériau transparent, Hétérojonction, Cellule solaire, Couche mince, Couche ultramince, InSnO, In O Sn, Substrat verre, 8115C, 8460J.
English descriptors
- KwdEn :
- Crystallization, Electrical conductivity, Experimental study, Growth rate, Heterojunctions, Indium oxides, Magnetrons, Morphology, Partial pressure, Pressure effects, Radiofrequency sputtering, Reflectivity, Solar cells, Texture, Thin films, Tin oxides, Transmittance, Transparent material, Ultrathin films.
Abstract
The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Coming glass using In2O3:SnO2 target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm2 and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of the sputtering system's vacuum level on the properties of indium tin oxide films</title><author><name sortKey="Zebaze Kana, M G" uniqKey="Zebaze Kana M">M. G. Zebaze Kana</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CNR-IMM Sezione di Bologna, via P. Gobetti 101</s1><s2>40129 Bologna</s2><s3>ITA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>40129 Bologna</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physics Advanced Laboratory, Sheda Science and Technology Complex, PMB 186 Garki</s1><s2>Abuja</s2><s3>NGA</s3><sZ>1 aut.</sZ></inist:fA14><country>Nigeria</country><wicri:noRegion>Abuja</wicri:noRegion></affiliation></author><author><name sortKey="Centurioni, E" uniqKey="Centurioni E">E. Centurioni</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CNR-IMM Sezione di Bologna, via P. Gobetti 101</s1><s2>40129 Bologna</s2><s3>ITA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>40129 Bologna</wicri:noRegion></affiliation></author><author><name sortKey="Iencinella, D" uniqKey="Iencinella D">D. Iencinella</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CNR-IMM Sezione di Bologna, via P. Gobetti 101</s1><s2>40129 Bologna</s2><s3>ITA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>40129 Bologna</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>DICASM, University of Bologna, viale Risorgimento 1</s1><s2>40136 Bologna</s2><s3>ITA</s3><sZ>3 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>40136 Bologna</wicri:noRegion></affiliation></author><author><name sortKey="Summonte, C" uniqKey="Summonte C">C. Summonte</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CNR-IMM Sezione di Bologna, via P. Gobetti 101</s1><s2>40129 Bologna</s2><s3>ITA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>40129 Bologna</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0216173</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0216173 INIST</idno><idno type="RBID">Pascal:06-0216173</idno><idno type="wicri:Area/Main/Corpus">009114</idno><idno type="wicri:Area/Main/Repository">008983</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystallization</term><term>Electrical conductivity</term><term>Experimental study</term><term>Growth rate</term><term>Heterojunctions</term><term>Indium oxides</term><term>Magnetrons</term><term>Morphology</term><term>Partial pressure</term><term>Pressure effects</term><term>Radiofrequency sputtering</term><term>Reflectivity</term><term>Solar cells</term><term>Texture</term><term>Thin films</term><term>Tin oxides</term><term>Transmittance</term><term>Transparent material</term><term>Ultrathin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Effet pression</term><term>Pulvérisation haute fréquence</term><term>Magnétron</term><term>Pression partielle</term><term>Texture</term><term>Facteur transmission</term><term>Facteur réflexion</term><term>Morphologie</term><term>Conductivité électrique</term><term>Taux croissance</term><term>Cristallisation</term><term>Indium oxyde</term><term>Etain oxyde</term><term>Matériau transparent</term><term>Hétérojonction</term><term>Cellule solaire</term><term>Couche mince</term><term>Couche ultramince</term><term>InSnO</term><term>In O Sn</term><term>Substrat verre</term><term>8115C</term><term>8460J</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Coming glass using In<sub>2</sub>O<sub>3</sub>:SnO<sub>2</sub> target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm<sup>2</sup> and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>500</s2></fA05><fA06><s2>1-2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of the sputtering system's vacuum level on the properties of indium tin oxide films</s1></fA08><fA11 i1="01" i2="1"><s1>ZEBAZE KANA (M. G.)</s1></fA11><fA11 i1="02" i2="1"><s1>CENTURIONI (E.)</s1></fA11><fA11 i1="03" i2="1"><s1>IENCINELLA (D.)</s1></fA11><fA11 i1="04" i2="1"><s1>SUMMONTE (C.)</s1></fA11><fA14 i1="01"><s1>CNR-IMM Sezione di Bologna, via P. Gobetti 101</s1><s2>40129 Bologna</s2><s3>ITA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Physics Advanced Laboratory, Sheda Science and Technology Complex, PMB 186 Garki</s1><s2>Abuja</s2><s3>NGA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>DICASM, University of Bologna, viale Risorgimento 1</s1><s2>40136 Bologna</s2><s3>ITA</s3><sZ>3 aut.</sZ></fA14><fA20><s1>203-208</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000153415070320</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0216173</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Coming glass using In<sub>2</sub>O<sub>3</sub>:SnO<sub>2</sub> target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm<sup>2</sup> and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Effet pression</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Pressure effects</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Pulvérisation haute fréquence</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Pulverización alta frecuencia</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Magnétron</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Magnetrons</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Pression partielle</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Partial pressure</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Texture</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Texture</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Transmittance</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Facteur réflexion</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Reflectivity</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Morphologie</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Morphology</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Taux croissance</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Growth rate</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Cristallisation</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Crystallization</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Indium oxyde</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium oxides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Etain oxyde</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Tin oxides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Matériau transparent</s0><s5>17</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Transparent material</s0><s5>17</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Material transparente</s0><s5>17</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Hétérojonction</s0><s5>18</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Heterojunctions</s0><s5>18</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>19</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Solar cells</s0><s5>19</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Couche mince</s0><s5>20</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Thin films</s0><s5>20</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Couche ultramince</s0><s5>21</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Ultrathin films</s0><s5>21</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>InSnO</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>In O Sn</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Substrat verre</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8115C</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8460J</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC07><fN21><s1>135</s1></fN21><fN44 i1="01"><s1>PSI</s1></fN44><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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